Atomistic modeling of multimillion atom nanostructures

DSpace/Manakin Repository

Show simple item record

dc.contributor.author Zielinski, Michal
dc.date.issued 2010-07-07
dc.identifier.citation Zielinski, M. (2010). Atomistic modeling of multimillion atom nanostructures. A 'IX Girona Seminar'. Girona: Universitat. [Consulta 6 setembre 2010]. Disponible a: http://hdl.handle.net/10256.1/1724
dc.identifier.uri http://hdl.handle.net/10256.1/1724
dc.description.abstract Atomistic calculations of properties of self-assembled quantum dots (SAD) involve computational domains of millions of atoms and their electronic properties cannot at present be computed using ab-initio methods. We present here approach consisting of three major steps: (1) calculation of equilibrium positions of atoms using valence force field model (VFF), (2) calculation of single particle electron and hole states using the linear combination of atomic orbitals - tight binding approximation (TB), and (3) inclusion of interactions between quasi-particles by defining an effective Hamiltonian of interacting excited quasiparticles, solved using the configuration interaction method (CI). In the VFF calculation we use the Keating model with material parameters chosen to reproduce bulk elastic constants. The TB parameters for InAs, InP and GaAs are obtained by fitting TB bulk band edges and effective masses to those obtained in experiment or by ab-initio calculations, with the valence band offset built into the parameter set. The strain dependence of TB parameters is fitted to reproduce the dependence of band edges on lattice deformation computed using DFT. The Coulomb matrix elements for CI are obtained with TB wave functions involving ~108 orbitals, with on-site and nearest-neighbour terms computed by approximating the TB basis with Slater orbitals. In the CI step, typically ~104 configurations are used as a basis for each multi-exciton system, while emission spectra are calculated from Fermi’s Golden Rule. We illustrate the method by computing the electronic and optical properties of a lens-shaped and discshaped InAs/InP/GaAs SAD using the VFF approach for 100s of millions of atoms, the 20-band sp3d5s* tight-binding model for millions of atoms and energies, states and emission spectra from up to ten multiexciton complexes obtained in the configuration-interaction method
dc.format.mimetype video/H263
dc.format.mimetype audio/mpeg
dc.language.iso eng
dc.publisher Universitat de Girona. Departament de Química
dc.publisher Universitat de Girona. Institut de Química Computacional
dc.relation.ispartofseries IX Girona Seminar
dc.rights Aquest document està subjecte a una llicència Creative Commons: Reconeixement - No comercial - Compartir igual (by-nc-sa)
dc.rights.uri http://creativecommons.org/licenses/by-nc-sa/3.0/es/deed.ca
dc.subject Química quàntica -- Congressos
dc.subject Quantum chemistry -- Congresses
dc.title Atomistic modeling of multimillion atom nanostructures
dc.type info:eu-repo/semantics/lecture


Files in this item

The following license files are associated with this item:

Show simple item record

Related Items

Search DUGiMedia


Browse

My Account

Statistics

You can copy this text:

This file is restricted

The file you are attempting to access is a restricted file and requires credentials to view. Please login below to access the file.

  1. We will contact you via the email address you have provided us.